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PDF IRG7I313UPBF Data sheet ( Hoja de datos )

Número de pieza IRG7I313UPBF
Descripción PDP TRENCH IGBT
Fabricantes International Rectifier 
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No Preview Available ! IRG7I313UPBF Hoja de datos, Descripción, Manual

PDP TRENCH IGBT
PD - 97411
IRG7I313UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
330
1.35
160
150
C
V
V
A
°C
G
E
n-channel
E
C
G
TO-220 Full-Pak
IRG7I313UPbF
G
G ate
C
C ollector
E
Em itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
www.DTahtaeSrhmeeat4lUR.ceosmistance
RθJC
RθCS
RθJA
Wt
Parameter
dJunction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Max.
±30
20
10
160
34
14
0.27
-40 to + 150
300
10 lbf·in (1.1 N·m)
Typ.
–––
0.50
2.0
Max.
3.7
65
Units
V
A
W
W/°C
°C
Units
°C/W
g
www.irf.com
1
08/05/09

1 page




IRG7I313UPBF pdf
10000
1000
Cies
IRG7I313UPbF
20
ID= 12A
16 VDS= 240V
VDS= 150V
12 VDS= 60V
8
100
Coes
4
10
0
Cres
100
0
200 0 10 20 30 40
VCE (V)
QG Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
1 0.20
0.10
0.05
0.1 0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R4R4
Ri (°C/W)
τCτ
0.0433
1.3307
τi (sec)
0.000006
0.000170
τ4τ4 1.5908 0.001311
0.7282 0.006923
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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