(PDF) SBP13007D Datasheet - High Voltage Fast-Switching NPN Power Transistor

Número de pieza	SBP13007D
Descripción	High Voltage Fast-Switching NPN Power Transistor
Fabricantes	WINSEMI SEMICONDUCTOR
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No Preview Available ! SBP13007D High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ Minimum Lot-to-Lot hFE Variation ◆ Wide Reverse Bias SOA ◆ Built-in free wheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 tP = 5ms Value 700 400 9.0 8.0 16 4.0 8.0 80 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case www.DataSheet4UR.cθoJAm Thermal Resistance Junction to Ambient Value 1.67 62.5 Units ℃/W ℃/W Oct 2008. Rev. 0 Copyright @ Semiwell Semiconductor Co.,Ltd.,All rights reserved. 1/4 1 page

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PDF SBP13007D Data sheet ( Hoja de datos )