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PDF SBP13007-H1 Data sheet ( Hoja de datos )
| Número de pieza | SBP13007-H1 | |
| Descripción | High Voltage Fast-Switching NPN Power Transistor | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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SemiWell Semiconductor
SBP13007- H1
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical [email protected])
- Minimum Lot-to-Lot hFE Variation
- Short storge time
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic,especially suitable for ballast system.
Symbol
1.Base ○
○ 2.Collector
○ 3.Emitter
TO-220
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP ＜ 5 ms )
Base Current
Base Peak Current ( tP ＜ 5 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
www.DataSheet4RUθJ.Acom
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 65 ~ 150
150
Value
1.56
62.5
Aug, 2003. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
1/6
1 page  
Inductive Load Switching & RBSOA Test Circuit
SBP13007-H1
IB1
VBE(off)
IC
IB
RBB
LC
f
VCE
D.U.T
VClamp
VCC
Resistive Load Switching Test Circuit
RC
IB1
VBE(off)
IC
IB
RBB
VCE
D.U.T
VCC
www.DataSheet4U.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SBP13007-H1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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