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PDF BAS3010B Data sheet ( Hoja de datos )

Número de pieza BAS3010B
Descripción Medium Power AF Schottky Diode
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! BAS3010B Hoja de datos, Descripción, Manual

Medium Power AF Schottky Diode
Forward current: 1 A
Reverse voltage: 30 V
Low forward voltage, low reverse current
For high efficiency DC/DC conversion,
fast switching, protection and
clamping applications
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BAS3010B...
BAS3010B-03W

Type
BAS3010B-03W
Package
SOD323
Configuration
single
Marking
2/ red
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage2)
Forward current2)
VR
IF
Average rectified forward current (50/60Hz, sinus) IFAV
Repetitive peak forward current
(tp 1 ms, D 0.5)
I FRM
Non-repetitive peak surge forward current
(t 10 ms)
I FSM
Value
30
1
1
3.5
10
Unit
V
A
Junction temperature
Tj 150
Operating temperature range
Top -65 ... 125
www.DSattoaSrahegeet4Ute.cmomperature
Tstg -65 ... 150
1Pb-containing package may be available upon special request
2 For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
°C
1 2007-04-19

1 page




BAS3010B pdf
Package Outline
Foot Print
Package SOD323
BAS3010B...
1.25
+0.2
-0.1
2
Cathode
marking
1
0.3
+0.1
-0.05
0.25 M A
0.9
+0.2
-0.1
0 ±0.05
A
0.3
+0.05
-0.2
0.15
+0.1
-0.06
Marking Layout (Example)
0.6
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
www.DataSheet4U.com
4
BAR63-03W
Type code
Cathode marking
Laser marking
0.2
Cathode
marking
0.65
1.35
5
1
2007-04-19

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