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PDF EMT2DXV6T5 Data sheet ( Hoja de datos )
| Número de pieza | EMT2DXV6T5 | |
| Descripción | Dual General Purpose Transistor | |
| Fabricantes | ON Semiconductor | |
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EMT2DXV6T5
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
• Lead−Free Solder Plating
• Low VCE(SAT), < 0.5 V
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
RqJA
Characteristic
(Both Junctions Heated)
Symbol
Total Device Dissipation TA = 25°C
PD
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad.
RqJA
TJ, Tstg
Value
−60
−50
−6.0
−100
Unit
V
V
V
mAdc
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Unit
mW
mW/°C
°C/W
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3) (2)
(1)
Q2 Q1
(4) (5)
(6)
654
123
MARKING
DIAGRAM
3M D
SOT−563
CASE 463A
Style 2
3M = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
EMT2DXV6T5
Package
Shipping†
SOT−563 2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.DataSheet4U.com
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 0
1
Publication Order Number:
EMT2DXV6T5/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EMT2DXV6T5.PDF ] | |
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