|
|
Número de pieza | TBB1016 | |
Descripción | Twin Built in Biasing Circuit MOS FET IC | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TBB1016 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! TBB1016
Twin Built in Biasing Circuit MOS FET IC
VHF/VHF RF Amplifier
REJ03G1327-0200
Rev.2.00
Aug 22, 2006
Features
• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
• Very useful for total tuner cost reduction.
• Suitable for World Standard Tuner RF amplifier.
• High gain; PG = 32 dB at 200 MHz
• Low noise; NF = 1.0 dB at 200 MHz
• Power supply voltage: 5 V
Outline
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
4
5
6
3
2
1
Notes: 1. Marking is “RM”.
2. TBB1016 is indivisual type number of RENESAS TBBFET.
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDS
6
Gate1 to source voltage
VG1S
+6
–0
Gate2 to source voltage
VG2S
+6
–0
Drain current
Channel power dissipation
ID
PchNote3
30
250
Channel temperature
Tch
150
Storage temperature
Tstg –55 to +150
Note: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm)
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
www.DataSheet4U.com
Rev.2.00 Aug 22, 2006 page 1 of 9
1 page TBB1016
Main Characteristics
Maximum Channel Power
Dissipation Curve
400
300
200
100
0 50 100 150 200
Ambient Temperature Ta (°C)
* Value on the glass epoxy board (50 mm × 40 mm × 1 mm)
Drain Current vs. Gate1 Voltage
25
VDS = 5 V
20 RG = 120 kΩ
4V
15
3V
10 2 V
5
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Drain Current vs. Gate Resistance
30
25
20
15
10
5 VDS = VG1 = 5 V
www.DataSheet4U.com VG2S = 4 V
0
10 20 50 100
200
500 1000
Gate Resistance RG (kΩ)
Rev.2.00 Aug 22, 2006 page 5 of 9
Typical Output Characteristics
25
VG2S = 4 V
20 VG1 = VDS
15
10
150
218200
kΩ
kΩ
kΩ
5
0 1 2345
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Gate1 Voltage
50
VDS = 5 V
RG = 120 kΩ
40 f = 1 kHz
4V
30 3 V
20 2 V
10
VG2S = 1 V
0 1 23 45
Gate1 Voltage VG1 (V)
Input Capacitance vs.
Gate2 to Source Voltage
5
4
3
2
1 VDS = VG1 = 5 V
RG = 120 kΩ
f = 1 MHz
0
01234
Gate2 to Source Voltage VG2S (V)
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet TBB1016.PDF ] |
Número de pieza | Descripción | Fabricantes |
TBB1010 | Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier | Renesas Technology |
TBB1012 | Twin Built in Biasing Circuit MOS FET IC | Renesas Technology |
TBB1016 | Twin Built in Biasing Circuit MOS FET IC | Renesas Technology |
TBB1017 | Twin Built in Biasing Circuit MOS FET IC | Renesas Technology |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |