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PDF TBB1016 Data sheet ( Hoja de datos )

Número de pieza TBB1016
Descripción Twin Built in Biasing Circuit MOS FET IC
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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TBB1016
Twin Built in Biasing Circuit MOS FET IC
VHF/VHF RF Amplifier
REJ03G1327-0200
Rev.2.00
Aug 22, 2006
Features
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
Very useful for total tuner cost reduction.
Suitable for World Standard Tuner RF amplifier.
High gain; PG = 32 dB at 200 MHz
Low noise; NF = 1.0 dB at 200 MHz
Power supply voltage: 5 V
Outline
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
4
5
6
3
2
1
Notes: 1. Marking is “RM”.
2. TBB1016 is indivisual type number of RENESAS TBBFET.
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDS
6
Gate1 to source voltage
VG1S
+6
–0
Gate2 to source voltage
VG2S
+6
–0
Drain current
Channel power dissipation
ID
PchNote3
30
250
Channel temperature
Tch
150
Storage temperature
Tstg –55 to +150
Note: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm)
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
www.DataSheet4U.com
Rev.2.00 Aug 22, 2006 page 1 of 9

1 page




TBB1016 pdf
TBB1016
Main Characteristics
Maximum Channel Power
Dissipation Curve
400
300
200
100
0 50 100 150 200
Ambient Temperature Ta (°C)
* Value on the glass epoxy board (50 mm × 40 mm × 1 mm)
Drain Current vs. Gate1 Voltage
25
VDS = 5 V
20 RG = 120 k
4V
15
3V
10 2 V
5
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
Drain Current vs. Gate Resistance
30
25
20
15
10
5 VDS = VG1 = 5 V
www.DataSheet4U.com VG2S = 4 V
0
10 20 50 100
200
500 1000
Gate Resistance RG (k)
Rev.2.00 Aug 22, 2006 page 5 of 9
Typical Output Characteristics
25
VG2S = 4 V
20 VG1 = VDS
15
10
150
218200
k
k
k
5
0 1 2345
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Gate1 Voltage
50
VDS = 5 V
RG = 120 k
40 f = 1 kHz
4V
30 3 V
20 2 V
10
VG2S = 1 V
0 1 23 45
Gate1 Voltage VG1 (V)
Input Capacitance vs.
Gate2 to Source Voltage
5
4
3
2
1 VDS = VG1 = 5 V
RG = 120 k
f = 1 MHz
0
01234
Gate2 to Source Voltage VG2S (V)

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