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PDF L182 Data sheet ( Hoja de datos )
| Número de pieza | L182 | |
| Descripción | HiPerFRED Epitaxial Diode with soft recovery | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de L182 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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DSEP 8-06A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 10 A
VRRM = 600 V
trr = 35 ns
VRSM
V
600
VRRM
V
600
Type
DSEP 8-06A
TO-220 AC
AC
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
TC = 135°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 0.9 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
mounting torque
typical
Maximum Ratings
35 A
10 A
50 A
0.1 mJ
0.1
-55...+175
175
-55...+150
60
0.4...0.6
2
A
°C
°C
°C
W
Nm
g
Symbol
IR x
VF y
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 10 A; TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 50 A/ms;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms
TVJ = 100°C
Characteristic Values
typ. max.
60 mA
0.25 mA
1.42 V
2.10 V
2.5 K/W
0.5 K/W
35 ns
4.4 A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Features
q International standard package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low IRM-values
q Soft recovery behaviour
q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency
switching devices
q Antisaturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable
operation
q Soft reverse recovery for low
EMI/RFI
q Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet L182.PDF ] | |
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