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PDF VBT2045C Data sheet ( Hoja de datos )

Número de pieza VBT2045C
Descripción Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! VBT2045C Hoja de datos, Descripción, Manual

New Product
VBT2045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5.0 A
TMBS ®
TO-263AB
K
2
1
VBT2045C
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
45 V
IFSM
160 A
VF at IF = 10 A
0.41 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
VBT2045C
45
20
10
160
- 40 to + 150
UNIT
V
A
A
°C
www.DataSheet4U.com
Document Number: 89359 For technical questions within your region, please contact one of the following:
Revision: 26-Oct-10
www.vishay.com
1

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