(PDF) KRLML6402 Datasheet - HEXFET Power MOSFET

Número de pieza	KRLML6402
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRLML6402 MOSFET ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(＜1.1mm). ● Available in tape and reel. ● Fast switching. SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Unit: mm 0.1+0.05 -0.01 11..BGasae te 22.ESmoituterrce 33..cDollreactionr ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-to-source voltage VGS ±12 Continuous drain curent,VGS@-4.5V , TA=25℃ Continuous drain curent,VGS@-4.5V , TA=70℃ -3.7 ID -2.2 Pulsed drain current 1 IDM -22 Power dissipation Power dissipation @TA=25℃ @TA=70℃ 1.3 PD 0.8 Linear derating factor 0.01 Single Pulse Avalanche Energy 2 EAS 11 Maximum Junction-to-Ambient 3 RθJA 100 Junction and storage temperature range TJ,TSTG -55 to +150 1Reptitive rating:pulse width limited by max.junction temperature. 2. StartingTJ=25℃,L=1.65mH ,RG=25Ω,IAS=-3.7A. 3.Surface mounted on 1''square single layer 1oz.copper FR4 board,steady state. www.DataSheet4U.com Unit V V A A W mW/℃ MJ ℃/W ℃ www.kexin.com.cn 1 1 page

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PDF KRLML6402 Data sheet ( Hoja de datos )