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PDF IPA180N10N3G Data sheet ( Hoja de datos )
| Número de pieza | IPA180N10N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPA180N10N3 G
100 V
18 mΩ
28 A
Package
Marking
PG-TO220-FP
180N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=28 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
www.DataSheet4U.com
1)J-STD20 and JESD22
2) See figure 3
Value
28
20
112
59
±20
30
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.2
page 1
2009-07-09
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
100
10 V
80
7.5 V
60
5.5 V
40
5V
20
4.5 V
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
50
40
30
20
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10
0
0
Rev. 2.2
175 °C
25 °C
246
V GS [V]
IPA180N10N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
4.5 V
25 5 V
20 6 V
7.5 V
15 10 V
10
5
0
30
20 40
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
60
50
40
30
20
10
0
80
page 5
20 40 60
I D [A]
80
2009-07-09
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPA180N10N3G.PDF ] | |
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