DataSheet.es    


PDF IPA037N08N3G Data sheet ( Hoja de datos )

Número de pieza IPA037N08N3G
Descripción Power-Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



Hay una vista previa y un enlace de descarga de IPA037N08N3G (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! IPA037N08N3G Hoja de datos, Descripción, Manual

OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPA037N08N3 G
Product Summary
VDS
RDS(on),max
ID
IPA037N08N3 G
80 V
3.7 mW
75 A
Package
Marking
PG-TO220-FP
037N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
ID
I D,pulse
E AS
V GS
T C=25 °C2)
T C=100 °C
T C=25 °C
I D=75 A, R GS=25 W
75
54
300
680
±20
Power dissipation
P tot T C=25 °C
41
Operating and storage temperature T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1)J-STD20 and JESD22
2) Current is limited by package; with an RthJC=0.7 K/W in a standard TO-220 package the chip is able
to carry 178A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2013-08-27

1 page




IPA037N08N3G pdf
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
10 V
7V
250
200
150
100
50
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
IPA037N08N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
10
6V
4.5 V
5V
5.5 V
6V
8
5.5 V
6
4
5V
7V
10 V
4.5 V
2
45
0
0 50 100 150 200 250 300
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
250
150
200
150 100
100
50
0
0
Rev. 2.1
175 °C
25 °C
246
VGS [V]
50
0
80
page 5
50 100
ID [A]
150
2013-08-27

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet IPA037N08N3G.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IPA037N08N3GPower-TransistorInfineon Technologies
Infineon Technologies

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar