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PDF WTD9435 Data sheet ( Hoja de datos )
| Número de pieza | WTD9435 | |
| Descripción | Surface Mount P-Channel Enhancement Mode POWER MOSFET | |
| Fabricantes | Weitron Technology | |
| Logotipo |  |
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Surface Mount P-Channel Enhancement
Mode POWER MOSFET
3 DRAIN
P b Lead(Pb)-Free
Features:
1 GATE
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <50m Ω@V GS =-10V
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
2
SOURCE
WTD9435
DRAIN CURRENT
-20 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
4
1. GATE
1
2
3
2.4 DRAIN
3. SOURCE
D-PAK / (TO-252)
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (VGS@10V, TC=25˚C)
, (VGS@10V, TC=100˚C)
Pulsed Drain Current1
Total Power Dissipation(TC=25˚C)
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RθJC
RθJA
TJ,Tstg
Value
-30
±20
-20
-13
-72
31
4.0
110
- 55~+150
Unit
V
A
W
˚C/W
˚C/W
˚C
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WEITRON
http:www.weitron.com.tw
1/6
12-Jul-07
1 page  
WTD9435
14
ID=-10A
12 VDS=-24V
10
8
6
4
2
0
0 4 8 12 16
QG , Total Gate Charge (nC)
Fig 7. Gate Charge Charateristics
20
100
1ms
10
10ms
100ms
1 Is
DC
Single Pulse
0.1
0.1 1 10 100
-VDS , Drain-to-Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
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td(on) tr
td(off) tr
Fig 11. Switching Time Waveform
1000
100
f=1.0MHz
Ciss
Coss
Crss
10
1 5 7 13 17 21 25 29
-V DS , Drain-to-Source Voltage(V)
Fig 8. Effective Transient Thermal Impedance
1
DUTY=0.5
f=1.0MHz
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t / T
Peak Tj=PDMx Rthjc+ TC
0.01
0.00001 0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig.12 Gate Charge Waveform
WEITRON
http://www.weitron.com.tw
5/6
12-Jul-07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WTD9435.PDF ] | |
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