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PDF K2364 Data sheet ( Hoja de datos )
| Número de pieza | K2364 | |
| Descripción | MOSFET ( Transistor ) - 2SK2364 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2363/2SK2364
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A)
2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A)
• Low Ciss Ciss = 1600 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2363/2SK2364) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±8.0
A
Drain Current (pulse)*
ID(pulse) ±32
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35 W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 8.0 A
Single Avalanche Energy**
EAS 320 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
www.DataSheet4U.com
Source
Document No. TC-2504A
(O. D. No. TC-8063A)
Date Published May 1995 P
Printed in Japan
© 1994
1 page  
2SK2363/2SK2364
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.5
1.0
ID = 10 A
5A
0.5
VGS = 10 V
0 –50
0
50 100 150
Tch - Channel Temperature - C
10 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
100
10
1
Crss
10 100
VDS - Drain to Source Voltage - V
1 000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 10 V
1.0
VGS = 0
0.1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td (off)
td (on)
1.0
0.1
VDS = 150 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/us
VGS = 0
www.DataSheet4U.com
100
0.1
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
ID = 10 A
VDD = 400 V
14
300 250 V 12
125 V
VGS
10
200 8
6
100
VDS
4
2
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2364.PDF ] | |
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