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PDF CED730G Datasheet ( Hoja de datos )

Número de pieza CED730G
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Chino-Excel Technology 
Logotipo Chino-Excel Technology Logotipo

Total 4 Páginas
		
CED730G Hoja de datos, Descripción, Manual
CED730G/CEU730G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
400V, 5A, RDS(ON) = 1@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
400
±30
5
20
68
0.54
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
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Symbol
RθJC
RθJA
Limit
2.2
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2009.Nov
http://www.cetsemi.com

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