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PDF CEU40N10 Data sheet ( Hoja de datos )
| Número de pieza | CEU40N10 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Chino-Excel Technology | |
| Logotipo |  |
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CED40N10/CEU40N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 37A, RDS(ON) = 32mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
100
±20
37
148
93.8
0.75
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
www.DataSheet4U.com
Symbol
RθJC
RθJA
Limit
1.6
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2009.Nov.
http://www.cetsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEU40N10.PDF ] | |
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