(PDF) CES2307 Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CES2307
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Chino-Excel Technology
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No Preview Available ! CES2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -3.2 IDM -12 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 www.DataSheet4U.com Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2 2010.May http://www.cetsemi.com 1 page

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PDF CES2307 Data sheet ( Hoja de datos )