(PDF) CES2305 Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CES2305
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Chino-Excel Technology
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No Preview Available ! CES2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. DS G SOT-23 G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±12 ID -4 IDM -15 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W www.DataSheet4U.com This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.April http://www.cetsemi.com 1 page

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PDF CES2305 Data sheet ( Hoja de datos )