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Número de pieza | CEU93A3 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Chino-Excel Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEU93A3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CED93A3/CEU93A3
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V.
RDS(ON) = 7.0mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 125
IDM 500
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
57
0.46
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
800
40
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
wwTwh.eDrmataalSRheeseist4taUnc.ceo, mJunction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.2
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2010.Sep.
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEU93A3.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEU93A3 | N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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