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PDF CED83A3G Datasheet ( Hoja de datos )

Número de pieza CED83A3G
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Chino-Excel Technology 
Logotipo Chino-Excel Technology Logotipo

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CED83A3G Hoja de datos, Descripción, Manual
CED83A3G/CEU83A3G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 93A, RDS(ON) = 4.8m@VGS = 10V.
RDS(ON) = 7.4m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
93
372
75
0.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
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Symbol
RθJC
RθJA
Limit
2
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2010.Oct
http://www.cetsemi.com

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