(PDF) MMBD202CC Datasheet - SILICON EPITAXIAL PLANAR SWITCHING DIODE

Número de pieza	MMBD202CC
Descripción	SILICON EPITAXIAL PLANAR SWITCHING DIODE
Fabricantes	SEMTECH ELECTRONICS
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No Preview Available ! MMBD202CC SILICON EPITAXIAL PLANAR SWITCHING DIODE Application • Ultra high speed switching 3 Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (t = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range 12 Marking Code: A4 SOT-23 Plastic Package Symbol VRM VR IO IFM IFSM Ptot Tj Ts Value 80 80 100 300 4 200 150 - 55 to + 150 Unit V V mA mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Total Capacitance at VR = 6 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 5 mA, RL = 50 Ω Symbol VF IR CT trr Max. 1.2 0.1 3.5 4 Unit V µA pF ns www.DataSheet4U.com SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 1 page

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PDF MMBD202CC Data sheet ( Hoja de datos )