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Número de pieza | NIC9N05TS1 | |
Descripción | Protected Power MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NIC9N05TS1 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! NIC9N05TS1, NIC9N05ATS1
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Rating
Symbol Value
Unit
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage − Continuous
Operating and Storage Temperature Range
Electro−Static Discharge Capability (HBM)
(MM)
VDSS
VGS
TJ, Tstg
ESD
52−59
±15
−55 to 150
5000
500
V
V
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
Drain
(Pins 2, 4)
Gate
(Pin 1)
Overvoltage
RG Protection
ESD Protection
MPWR
Source
(Pin 3)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1
Publication Order Number:
NIC9N05TS1/D
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet NIC9N05TS1.PDF ] |
Número de pieza | Descripción | Fabricantes |
NIC9N05TS1 | Protected Power MOSFET | ON Semiconductor |
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