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PDF DZT491 Data sheet ( Hoja de datos )
| Número de pieza | DZT491 | |
| Descripción | NPN SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DZT491
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DZT591C)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4 2 C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
Base Current
Power Dissipation (Note 3)
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Pd
Tj, TSTG
Value
80
60
5
1
2
200
1
-55 to +150
Unit
V
V
V
A
A
mA
W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
www.DBaatsaeS-Ehmeeittt4eUr S.caotumration Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Symbol Min Typ Max
ICBO
⎯ ⎯ 100
IEBO
⎯ ⎯ 100
ICES
⎯ ⎯ 100
V(BR)CBO 80
⎯
⎯
V(BR)CEO 60
⎯
⎯
V(BR)EBO 5 ⎯ ⎯
VCE(SAT)
hFE
VBE(SAT)
VBE(on)
⎯
⎯
100
100
80
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.25
0.5
⎯
300
⎯
⎯
1.1
1
fT
Cobo
150 ⎯
⎯⎯
⎯
10
Unit Test Conditions
nA VCB = 60V
nA VEB = 4V
nA VCES = 60V
V IC = 100μA
V IC = 10mA
V IE = 100μA
V IC = 500mA, IB = 50mA
V IC = 1A, IB = 100mA
⎯ VCE = 5V, IC = 1mA
⎯ VCE = 5V, IC = 500mA
⎯ VCE = 5V, IC = 1A
⎯ VCE = 5V, IC = 2A
V IC = 1A, IB = 100mA
V IC = 1A, VCE = 5V
MHz VCE = 10V, IC = 50mA, f = 100MHz
pF VCB = 10V, IE = 0A, f =1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms duty cycle ≤ 2%
DS30946 Rev. 3 - 2
1 of 4
www.diodes.com
DZT491
© Diodes Incorporated
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DZT491.PDF ] | |
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