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PDF DMP2104V Data sheet ( Hoja de datos )
| Número de pieza | DMP2104V | |
| Descripción | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMP2104V
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• P-Channel MOSFET
• Very Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-563 D D S
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Pulsed Drain Current
Operating and Storage Temperature Range
D DG
TOP VIEW
Internal Schematic
Steady
State
t ≤ 5s
TA = 25°C
TA = 70°C
Steady
State
TA = 25°C
TA = 70°C
t ≤ 5s
tp = 10μs
Symbol
VDSS
VGSS
ID
PD
ID
PD
IDM
Tj, TSTG
Value
-20
±12
-860
-690
170
-950
-760
210
-4.0
-55 to +150
Units
V
V
mA
mW
mA
mW
A
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
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Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
TJ = 25°C
TJ = 125°C
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯ ⎯ V VGS = 0V, ID = -250μA
⎯
-1.0
-5.0
μA VDS = -20V, VGS = 0V
⎯ ±100 nA VGS = ±12V, VDS = 0V
VGS(th) -0.45
⎯
-1.0
V VDS = VGS, ID = -250μA
92 150
VGS = -4.5V, ID = -950mA
RDS (ON)
⎯
134 200 mΩ VGS = -2.5V, ID = -670mA
180 240
VGS = -1.8V, ID = -200mA
gFS ⎯ 3.1 ⎯
S VDS = -10V, ID = -810mA
VSD ⎯
⎯ -0.9
V VGS = 0V, IS = -360mA
Ciss ⎯ 320 ⎯
Coss
⎯
80
⎯
Crss
⎯
60
⎯
pF
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on FR-4 PCB with 1 inch square pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMP2104V
Document number: DS30942 Rev. 5 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated
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