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Número de pieza | DMC2004LPK | |
Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMC2004LPK (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage VGS(th) < 1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
ESD protected
Mechanical Data
• Case: DFN1612-6
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.003 grams (approximate)
DFN1612-6
D1 G2 S2
6 54
Q1 Q2
12
S1 G1
3
D2
TOP VIEW
Internal Schematic
Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
Value
20
±8
750
540
Unit
V
V
mA
Maximum Ratings P-CHANNEL – Q2 @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
Value
-20
±8
-600
-430
Unit
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Pd
RθJA
Tj, TSTG
500
250
-65 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
www.DataSheet4U.com
Unit
mW
°C/W
°C
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
1 of 7
www.diodes.com
September 2007
© Diodes Incorporated
1 page Q2, P-CHANNEL, continued
DMC2004LPK
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 15 Static Drain-Source On-Resistance vs.
Drain Current
10
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 16 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 Static Drain-Source On-State Resistance
vs. Ambient Temperature
www.DataSheet4U.com
-ID, DRAIN CURRENT (A)
Fig. 19 Forward Transfer Admittance vs. Drain Current
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
5 of 7
www.diodes.com
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Capacitance
September 2007
© Diodes Incorporated
5 Page |
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