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PDF DCP51-16 Data sheet ( Hoja de datos )
| Número de pieza | DCP51-16 | |
| Descripción | PNP SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes | |
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DCP51/-16
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DCP54)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification
Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish − Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4 2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
-45
-45
-5
-1.5
-1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @ TA = 25°C (Note 3)
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)
Symbol
Pd
Tj,TSTG
RθJA
Value
1 (Note 3)
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
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DC Current Gain
DCP51-16
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
VBE(ON)
hFE
Min
-45
-45
-5
⎯
⎯
⎯
⎯
⎯
40
25
100
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Transition Frequency
fT ⎯ 200
Max
⎯
⎯
⎯
-100
-10
-10
-0.5
-1.0
250
⎯
250
⎯
Unit
V
V
V
nA
μA
μA
V
V
⎯
MHz
Conditions
IC = -100μA, IE = 0A
IC = -10mA, IB = 0A
IE = -10μA, IC = 0A
VCB = -30V, IE = 0A
VCB = - 30V, IE = 0A, TA = 150°C
VEB = -5V, IC = 0A
IC = -500mA, IB = -50mA
IC = -500mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -50mA, VCE = -5V,
f = 100MHz
Note:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
DS31196 Rev. 2 - 2
1 of 4
www.diodes.com
DCP51/-16
© Diodes Incorporated
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DCP51-16.PDF ] | |
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