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PDF CHM8030LANPT Data sheet ( Hoja de datos )
| Número de pieza | CHM8030LANPT | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Chenmko Enterprise | |
| Logotipo |  |
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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
CHM8030LANPT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 75 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. (D2PAK)
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
CONSTRUCTION
* N-Channel Enhancement
CIRCUIT
D (3)
(1) G
S (2)
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
TA = 25°C unless otherwise noted
VGSS
Gate-Source Voltage
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
PD Maximum Power Dissipation
TJ Operating Temperature Range
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
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RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
D2PAK
0.420(10.67)
0.380(9.69)
0.245(6.22)
MIN.
K
132
0.190(4.83)
0.160(4.06)
0.055(1.40)
0.045(1.14)
0.055(1.40)
0.047(1.19)
0.100(2.54)
0.095(2.41)
0.110(2.79)
0.090(2.29)
0.037(0.940)
0.027(0.686)
1 Gate
2 Source
3 Drain ( Heat Sink )
Dimensions in inches and (millimeters)
0.025(0.64)
0.018(0.46)
0.110(2.79)
0.080(2.03)
D2PAK
CHM8030LANPT
30
±20
75
225
75
-55 to 150
-55 to 150
Units
V
V
A
W
°C
°C
62.5
°C/W
2006-01
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CHM8030LANPT.PDF ] | |
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