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PDF DMN4027SSS Data sheet ( Hoja de datos )

Número de pieza DMN4027SSS
Descripción 40V N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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A Product Line of
Diodes Incorporated
DMN4027SSS
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
40V
RDS(on)
27mΩ @ VGS= 10V
47mΩ @ VGS= 4.5V
ID
TA = 25°C
8.0A
6.1A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Motor control
Backlighting
DC-DC Converters
Power management functions
SO-8
Features and Benefits
Low on-resistance
Fast switching speed
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
Top View
Top View
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product
DMN4027SSS-13
Marking
N4027SS
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
www.DataSheet4U.com
N4027SS
YY WW
= Manufacturer’s Marking
N4027SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-53)
DMN4027SSS
Document Number DS32103 Rev 1 - 2
1 of 8
www.diodes.com
March 2010
© Diodes Incorporated

1 page




DMN4027SSS pdf
Typical Characteristics
A Product Line of
Diodes Incorporated
DMN4027SSS
10V 4.5V
10
T = 25°C
3.5V
1 3V
V
GS
0.1
2.5V
0.01
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
1
10V
4V
3.5V
3V
2.5V
0.1
2V
V
GS
0.01
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
V = 10V
DS
1
0.1 T = 150°C
0.01
T = 25°C
1E-3
123
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
1.6
V = 10V
GS
1.4 I = 12A
D
1.2
R
DS(on)
1.0
0.8
V
GS(th)
V =V
0.6 GS DS
I = 250uA
D
0.4
-50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
10
T = 25°C
1
3V
V
GS
3.5V
0.1 4V
4.5V
www.DataSheet4U.com
10V
0.01
0.01 0.1 1 10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
0.1 T = 25°C
0.01
Vgs = 0V
1E-3
0.2 0.4 0.6 0.8
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
1.0
DMN4027SSS
Document Number DS32103 Rev 1 - 2
5 of 8
www.diodes.com
March 2010
© Diodes Incorporated

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