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PDF DMA2610H Data sheet ( Hoja de datos )

Número de pieza DMA2610H
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! DMA2610H Hoja de datos, Descripción, Manual

This product complies with the RoHS Directive (EU 2002/95/EC).
DMA2610H
Silicon PNP epitaxial planar type
For digital circuits
Features
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
Dual DRA2123Y (Common emitter)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
–50
–50
–100
300
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
Package
Code
Mini5-G3-B
Pin Name
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
Marking Symbol: R4
Internal Connection
(C1) (C2)
54
Tr1
R2
R1
Tr2
R2
R1
123
(B1) (E) (B2)
Resistance value
R1 2.2 kΩ
R2 10 kΩ
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = –10 µA, IE = 0
–50
Collector-emitter voltage (Base open)
VCEO IC = –2 mA, IB = 0
–50
Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0
– 0.1
Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0
– 0.5
Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0
–1.0
Forward current transfer ratio
hFE VCE = –10 V, IC = –5 mA
30
hFE ratio *
hFE
(Small/Large)
VCE = –10 V, IC = –5 mA
0.50 0.99
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = – 0.5 mA
– 0.25
Input voltage (ON)
VI(on) VCE = – 0.2 V, IC = –5 mA
–1.1
Input voltage (OFF)
VI(off) VCE = –5 V, IC = –100 µA
– 0.5
Input resistance
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Resistance ratio
R1
R1 / R2
–30% 2.2 +30%
0.17 0.22 0.27
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Publication date: January 2010
ZJJ00544BED
1

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