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PDF DA2JF81 Data sheet ( Hoja de datos )
| Número de pieza | DA2JF81 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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This product complies with the RoHS Directive (EU 2002/95/EC).
DA2JF81
Silicon epitaxial planar type
For high speed switching circuits
Features
Small reverse current IR
High repetitive peak reverse voltage VRRM
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current
Non-repetitive peak forward surge current *1, 2
VRRM
VRSM
IF
IFSM
800
800
200
1
Junction temperature
Tj –40 to +150
Storage temperature
Tstg –40 to +150
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
mA
A
°C
°C
Package
Code
SMini2-F5-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: 5A
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 200 mA
2.5 V
Reverse current
IRRM1
IRRM2
VRRM = 400 V
VRRM = 800 V
1
mA
10
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
0.6 pF
Reverse recovery time *
trr
IF = 100 mA, IR = 200 mA,
Irr = 0.25 × IR
10 45
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
50 Ω
50 Ω
trr
www.DataSheet4U.com
D.U.T.
5.5 Ω
IF 0.25 × IR
IR
Publication date: June 2010
ZKJ00029CED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DA2JF81.PDF ] | |
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