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PDF DA24F41 Data sheet ( Hoja de datos )
| Número de pieza | DA24F41 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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This product complies with the RoHS Directive (EU 2002/95/EC).
DA24F41
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time trr
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current
Non-repetitive peak forward surge current *
VRRM
VRSM
IF
IFSM
400
400
1.0
20
Junction temperature
Tj –40 to +150
Storage temperature
Tstg –40 to +150
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
Package
Code
TMiniP2-F2-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: 4Q
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 1 A
1.0 1.2
V
Reverse current
IRRM VRRM = 400 V
10 mA
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
50 pF
Reverse recovery time *
trr IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
15 45
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
50 Ω
50 Ω
trr
D.U.T.
IF
5.5 Ω
0.25 × IR
IR
www.DataSheet4U.com
Publication date: June 2010
ZKJ00031BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DA24F41.PDF ] | |
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