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PDF IPB038N12N3G Data sheet ( Hoja de datos )

Número de pieza IPB038N12N3G
Descripción OptiMOS3 Power-Transistor
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO-263)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G
IPB038N12N3 G
120 V
3.8 m
120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25
Gate source voltage 4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
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Value
120
120
480
900
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.2
page 1
2009-07-16

1 page




IPB038N12N3G pdf
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
320
7V
10 V
6.5 V
6V
240
IPP041N12N3 G
IPI041N12N3 G
IPB038N12N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
10
9 4.5 V
8
7
5V
160 5.5 V
80 5 V
4.5 V
0
012345
V DS [V]
6
5
4
3
2
0
5.5 V
6V
10 V
50 100
I D [A]
150
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
250
200
150
100
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50
175 °C
25 °C
160
120
80
40
0
0
Rev. 2.2
246
V GS [V]
0
80
page 5
50 100
I D [A]
150
2009-07-16

5 Page





IPB038N12N3G arduino
IPP041N12N3 G
IPI041N12N3 G
IPB038N12N3 G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
www.DataSheqeut4eUst.icoonmplease contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 2.2
page 11
2009-07-16

11 Page







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