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PDF IPI040N06N3G Data sheet ( Hoja de datos )

Número de pieza IPI040N06N3G
Descripción OptiMOS3 Power-Transistor
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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Type
OptiMOS3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• N-channel, normal level
• Avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB037N06N3 G IPI040N06N3 G
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Product Summary
V DS
R DS(on),max (SMD)
ID
60 V
3.7 mΩ
90 A
previous engineering
sample codes:
IPP04xN06N
IPI04xN06N
IPB04xN06N
IPP040N06N3 G
Package
Marking
PG-TO263-3
037N06N
PG-TO262-3
040N06N
PG-TO220-3
040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T C=25 °C2)
90 A
T C=100 °C
90
Pulsed drain current3)
I D,pulse T C=25 °C
360
Avalanche energy, single pulse
E AS I D=90 A, R GS=25 Ω
165 mJ
Gate source voltage
V GS
±20 V
Power dissipation
P tot T C=25 °C
188 W
Operating and storage temperature T j, T stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
www.DataShe1e)Jt4-SUT.cDo2m0 and JESD22
2) Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 162 A.
3) See figure 3
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.03
page 1
2009-12-17

1 page




IPI040N06N3G pdf
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
320
10 V
8V
7V
6.5 V
240
6V
160
5.5 V
80
5V
4.5 V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
320
4
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
15
4.5 V
12
5V
5.5 V
9
6 6V
6.5 V
7V
8V
3 10 V
0
50
50 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
150
240
160
www.DataSheet4U.c8o0m
0
0
Rev. 1.03
160
120
175 °C
25 °C
80
40
24
V GS [V]
0
60
page 5
50 100
I D [A]
150
2009-12-17

5 Page





IPI040N06N3G arduino
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
www.DataSheDetu4eUt.ocotemchnical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.03
page 11
2009-12-17

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