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Número de pieza | IPB036N12N3G | |
Descripción | OptiMOS3 Power-Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB036N12N3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! IPB036N12N3 G
OptiMOS™3 Power-Transistor
Features
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
Product Summary
V DS
R DS(on),max
ID
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
120 V
3.6 mΩ
180 A
Type
IPB036N12N3 G
Package
Marking
PG-TO263-7
036N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
www.DataSheOetp4eUr.actoinmg and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
180
139
720
900
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2009-12-17
1 page IPB036N12N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
10 V
350
7V
300
250
200
150
100
50
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
6V
5.5 V
5V
5
4
3
5.5 V
6V
7V
10 V
2
5V
1
4.5 V
45
0
0 100 200 300
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
400
250
350
200
300
250
200
150
www.DataSheet4U.1c0o0m
50
0
0
Rev. 2.2
175 °C
25 °C
246
V GS [V]
150
100
50
0
80
page 5
40 80 120 160 200
I D [A]
2009-12-17
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB036N12N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB036N12N3G | OptiMOS3 Power-Transistor | Infineon Technologies AG |
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