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PDF IPB031NE7N3G Data sheet ( Hoja de datos )
| Número de pieza | IPB031NE7N3G | |
| Descripción | OptiMOS3 Power-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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OptiMOSTM3 Power-Transistor
Features
• Optimized technology for synchronous rectification
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
Product Summary
V DS
R DS(on),max
ID
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB031NE7N3 G
IPB031NE7N3 G
75 V
3.1 mΩ
100 A
Package
Marking
PG-TO263-3
031NE7N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=74 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature
www.DataSheet4U.com
T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
100
100
400
640
±20
214
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2009-12-16
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
10 V 7 V
350
IPB031NE7N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
8
5 V 5.5 V
7
6V
300 6
250
200
150
100
50
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
5
6V
4
5.5 V
3
2
5V
1
4.5 V
0
45
0 100 200 300
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
7V
10 V
400
200
350
300 150
250
200 100
150
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50
50
0
0
Rev. 2.2
175 °C
25 °C
246
V GS [V]
0
80
page 5
50 100
I D [A]
150
2009-12-16
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB031NE7N3G.PDF ] | |
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