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Número de pieza | IDT04S60C | |
Descripción | 2nd Generation thinQ SiC Schottky Diode | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IDT04S60C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! 2ndGeneration thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDTw0w4Sw6.D0CataSheet4U.com
600 V
8 nC
4A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
IDT04S60C
Package
PG-TO220-2-2
Marking
D04S60C
Pin 1
C
Pin 2
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
RMS forward current
IF
I F,RMS
T C<140 °C
f =50 Hz
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C=25 °C, t p=10 ms
Repetitive peak forward current
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
I F,max T C=25 °C, t p=10 µs
∫i 2dt
T C=25 °C, t p=10 ms
V RRM
dv/ dt V R = 0….480V
P tot
T j, T stg
T C=25 °C
M3 and M3.5 screws
Value
4
5.6
32
18
132
5.1
600
50
42
-55 ... 175
60
Unit
A
A2s
V
V/ns
W
°C
Mcm
Rev. 2.0
page 1
2006-03-08
1 page 9 Typ. C stored energy
E C=f(V R)
IDTw0w4wS6.D0aCtaSheet4U.com
10 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100 200 300 400 500 600
V R [V]
10
8
6
4
2
0
100
400 700
di F/dt [A/µs]
1000
Rev. 2.0
page 5
2006-03-08
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IDT04S60C.PDF ] |
Número de pieza | Descripción | Fabricantes |
IDT04S60C | 2nd Generation thinQ SiC Schottky Diode | Infineon Technologies AG |
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