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PDF EPA160B Data sheet ( Hoja de datos )
| Número de pieza | EPA160B | |
| Descripción | High Efficiency Heterojunction Power FET | |
| Fabricantes | Excelics Semiconductor | |
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Excelics
www.DataSheet4U.com
EPA160B
DATA SHEET
High Efficiency Heterojunction Power FET
• +31.0dBm TYPICAL OUTPUT POWER
• 5.5dB TYPICAL POWER GAIN AT 18GHz
• 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=4.5mA
BVgd
Drain Breakdown Voltage Igd=1.6mA
BVgs
Source Breakdown Voltage Igs=1.6mA
Rth Thermal Resistance (Au-Sn Eutectic Attach)
540
50 156
D D 48
370
100
40
SG
S GS
95 50 120
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
29.0
9.0
290
TYP
31.0
31.0
10.5
5.5
45
480
MAX UNIT
dBm
dB
%
660 mA
320 500
mS
-1.0 -2.5 V
-11 -15
V
-7 -14
33
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs Gate-Source Voltage -8V
-3V
Ids Drain Current
Idss
435mA
Igsf
Forward Gate Current
80mA
14mA
Pin Input Power
28dBm
Tch Channel Temperature 175oC
Tstg Storage Temperature
-65/175oC
@3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
4.1W
3.4W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EPA160B.PDF ] | |
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