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PDF RE46C190 Data sheet ( Hoja de datos )
| Número de pieza | RE46C190 | |
| Descripción | CMOS Low Voltage Photoelectric Smoke Detector ASIC | |
| Fabricantes | Microchip Technology | |
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RE46C190www.DataSheet4U.com
CMOS Low Voltage Photoelectric Smoke Detector ASIC
with Interconnect and Timer Mode
Features
• Two AA Battery Operation
• Internal Power On Reset
• Low Quiescent Current Consumption
• Available in 16L N SOIC
• Local Alarm Memory
• Interconnect up to 40 Detectors
• 9 Minute Timer for Sensitivity Control
• Temporal or Continuous Horn Pattern
• Internal Low Battery and Chamber Test
• All Internal Oscillator
• Internal Infrared Emitter Diode (IRED) driver
• Adjustable IRED Drive current
• Adjustable Hush Sensitivity
• 2% Low Battery Set Point
Description
The RE46C190 is a low power, low voltage CMOS
photoelectric type smoke detector IC. With minimal
external components, this circuit will provide all the
required features for a photoelectric-type smoke
detector.
The design incorporates a gain-selectable photo
amplifier for use with an infrared emitter/detector pair.
An internal oscillator strobes power to the smoke
detection circuitry every 10 seconds, to keep the
standby current to a minimum. If smoke is sensed, the
detection rate is increased to verify an Alarm condition.
A high gain mode is available for push button chamber
testing.
A check for a low battery condition is performed every
86 seconds, and chamber integrity is tested once every
43 seconds, when in Standby. The temporal horn pat-
tern supports the NFPA 72 emergency evacuation sig-
nal.
An interconnect pin allows multiple detectors to be
connected such that, when one unit alarms, all units will
sound.
An internal 9 minute timer can be used for a Reduced
Sensitivity mode.
Utilizing low power CMOS technology, the RE46C190
was designed for use in smoke detectors that comply
with Underwriters Laboratory Specification UL217 and
UL268.
PIN CONFIGURATION
VSS
IRED
VDD
TEST
TEST2
IRP
IRN
RLED
RE46C190
SOIC
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
LX
VBST
HS
HB
IO
IRCAP
FEED
GLED
2010 Microchip Technology Inc.
DS22271A-page 1
1 page  
RE46C190
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage .....................................VDD=5.5V; VBST =13V
Input Voltage Range Except FEED, TEST..... VIN = -.3V to VDD +.3V
FEED Input Voltage Range ..................... VINFD =-10 to +22V
TEST Input Voltage Range ......... VINTEST =-.3V to VBST+.3V
Input Current except FEED ................................... IIN = 10 mA
Continuous Operating Current (HS, HB, VBST)...... IO= 40 mA
Continuous Operating Current (IRED) ...............IOIR= 300 mA
Operating Temperature ...............................TA = -10 to +60°C
Storage Temperature ............................TSTG = -55 to +125°C
ESD Human Body Model .................................. VHBM = 750V
ESD Machine Model .............................................VMM = 75V
† Notice: Stresses above those listed under “Maximum
ratings”
a stress
may cause
rating only
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these or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS
DC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -10 to +60°C, VDD = 3V,
VBST = 4.2V, Typical Application (unless otherwise noted)(Note 1, Note 2, Note 3)
Parameter
Symbol
Test
Pin
Min
Typ
Max Units
Conditions
Supply Voltage
Supply Current
VDD
3
2
— 5.0 V Operating
IDD1
3
—
1
2 µA Standby, Inputs low,
No loads, Boost Off, No
smoke check
Standby Boost
Current
IBST1
15
—
100
— nA Standby, Inputs low,
No loads, Boost Off, No
smoke check
IRCAP Supply
Current
IIRCAP
11
—
500
— µA During smoke check
Boost Voltage
VBST1
15
VBST2
15
3.0
8.5
3.6 4.2 V IRCAP charging for Smoke
Check, GLED operation
IOUT = 40 mA
9.6 10.7 V No local alarm,
RLED Operation,
IOUT = 40 mA, IO as an
input
Input Leakage
IINOP 6 -200
—
200 pA IRP = VDD or VSS
7 -200
—
200 pA IRN = VDD or VSS
IIHF 10
—
20
50 µA FEED = 22V; VBST = 9V
IILF 10 -50
-15
— µA FEED = -10V;
VBST = 10.7V
Input Voltage Low
VIL1
10
—
—
2.7 V FEED, VBST = 9V
VIL2
12
—
— 800 mV No local alarm,
IO as an input
Note 1: Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the
inductor disconnected and the DC-DC converter NOT running.
2: Typical values are for design information only.
3: Limits over the specified temperature range are not production tested and are based on characterization
data. Unless otherwise stated, production test is at room temperature with guardbanded limits.
4: Not production tested.
2010 Microchip Technology Inc.
DS22271A-page 5
5 Page 
RE46C190
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
www.DataSheet4U.com
TABLE 2-1:
RE46C190
SOIC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PIN FUNCTION TABLE
Symbol
Function
VSS
IRED
VDD
TEST
TEST2
IRP
IRN
RLED
GLED
FEED
IRCAP
IO
HB
HS
VBST
LX
Connect to the negative supply voltage.
Provides a regulated and programmable pulsed current for the infrared emitter
diode.
Connect to the positive supply or battery voltage.
This input is used to invoke Test modes and the Timer mode. This input has an
internal pull-down.
Test input for test and programming modes. This input has an internal pull-down.
Connect to the anode of the photo diode.
Connect to the cathode of the photo diode.
Open drain NMOS output, used to drive a visible LED. This pin provides load current
for the low battery test, and is a visual indicator for Alarm and Hush modes.
Open drain NMOS output used to drive a visible LED to provide visual indication of
an Alarm Memory condition.
Usually connected to the feedback electrode through a current limiting resistor. If not
used, this pin must be connected to VDD or VSS.
Used to charge and monitor the IRED capacitor.
This bidirectional pin provides the capability to interconnect many detectors in a
single system. This pin has an internal pull-down device and a charge dump device.
This pin is connected to the metal electrode of a piezoelectric transducer.
This pin is a complementary output to HB, connected to the ceramic electrode of the
piezoelectric transducer.
Boosted voltage produced by DC-DC converter.
Open drain NMOS output, used to drive the boost converter inductor. The inductor
should be connected from this pin to the positive supply through a low resistance
path.
2010 Microchip Technology Inc.
DS22271A-page 11
11 Page | ||
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