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PDF KSH13005W Data sheet ( Hoja de datos )
| Número de pieza | KSH13005W | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13005W
█ HIGH VOLTAGE SWITCH MODE APPLICICATION
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）…………………… 75W
VCBO——Collector-Base Voltage…………………………… 700V
VCEO——Collector-Emitter Voltage………………………… 400V
VEBO——Emitter-Base Voltage……………………………… 9V
IC——Collector Curren（t DC）………………………………… 4A
IC——Collector Curren（t Pulse）……………………………… 8A
IB——Base Current……………………………………………2A
█ 电参数（Ta=25℃）
Symbol
BVCEO
IEBO
HFE
Characteristics
Collector-Emitter Sustaining Voltage
Emitter-Base Cut-off Current
DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain-Bandwidth Product
tON Turn On Time
tS Storage Time
tF Fall Time
Min Typ
400
10
8
65
4
Max
1
40
40
0.5
0.6
1
1.2
1.6
0.8
4
0.9
TO-263（D2PAK）
1―Base，B
2―Collector，C
3―Emitter, E
Unit
V
mA
V
V
V
V
V
pF
MHz
μs
μs
μs
Test Conditions
IC=10mA, IB=0
VEB=9V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
VCC=125V,
IC=2A,
IB1=-IB2=0.4A
hFE classification：H1（10--16） H2（14--21） H3（19--26） H4（24--31） H5（29--40）
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