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PDF KSH13003 Data sheet ( Hoja de datos )
| Número de pieza | KSH13003 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13003
High Speed Switching. Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-65~150
Tj Junction Temperature
150
PC Collector Dissipation
40W
VCBO Collector-Base Voltage
700V
VCEO Collector-Emitter Voltage
400V
VEBO Emitter - Base Voltage
9V
I CCollector Current
1.5A
IB Base Curren
0.75A
1 Base B
Collector C
Emitter E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO
IEBO
HFE1
HFE2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
fT
tON
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn On Time
IC=5mA, IB=0
VEB=9V, IC=0
VCE=5V, IC=0.5A
VCE=2V, IC=1A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
VCE=10V,IC=0.1A
s VCC=125V, IC=1A,
tSTG Storage Time
tF Fall Time
s IB1=0.2A,IB2=-0.2A
s RL=125
hFE Classification
H1 H2
H3
H4 H5
10-16
14-21
19-26
24-31
29-40
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