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PDF KM736V787 Data sheet ( Hoja de datos )
| Número de pieza | KM736V787 | |
| Descripción | 128Kx36 Synchronous SRAM | |
| Fabricantes | Samsung Semiconductor | |
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KM736V787
Document Title
128Kx36-Bit Synchronous Burst SRAM
128Kx36 Synchronous SRAM
Revision History
Rev. No. History
Draft Date
0.0 Initial draft
May. 15. 1997
0.1 Modify power down cycle timing & Interleaved read timing,
Insert Note 4 at AC timing characteristics.
Change ISB1 value from 10mA to 30mA.
Change ISB2 value from 10mA to 20mA.
Feb. 11. 1998
0.2 Change Undershoot spec
from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2)
Add Overshoot spec 4.6V((pulse width≤tCYC/2)
Change VIH max from 5.5V to VDD+0.5V
April. 14. 1998
0.3 Change ISB2 value from 20mA to 30mA.
May. 13. 1998
Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V.
1.0 Final spec Release
May. 15. 1998
2.0 Add VDDQ Supply voltage( 2.5V )
Dec. 02. 1998
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - December 1998
Rev 2.0
www.DataSheet.in
1 page  
KM736V787
128Kx36 Synchronous SRAM
SYNCHRONOUS TRUTH TABLE
CS1 CS2 CS2 ADSP ADSC ADV WRITE CLK ADDRESS ACCESSED
HXXXLX X ↑
N/A
L LXLXX X ↑
N/A
LXHLXX X ↑
N/A
L LXXLX X ↑
N/A
LXHXLX X ↑
N/A
LHL LXX X ↑
External Address
LHLHLX L ↑
External Address
LHLHLX H ↑
External Address
XXXHHL H ↑
Next Address
HXXXHL H ↑
Next Address
XXXHHL L ↑
Next Address
HXXXHL L ↑
Next Address
XXXHHH H ↑
Current Address
HXXXHH H ↑
Current Address
XXXHHH L ↑
Current Address
HXXXHH L ↑
Current Address
Notes : 1. X means "Don′t Care".
2. The rising edge of clock is symbolized by ↑.
3. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
4. Operation finally depends on status of asynchronous input pins(ZZ and OE).
OPERATION
Not Selected
Not Selected
Not Selected
Not Selected
Not Selected
Begin Burst Read Cycle
Begin Burst Write Cycle
Begin Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Write Cycle
Continue Burst Write Cycle
Suspend Burst Read Cycle
Suspend Burst Read Cycle
Suspend Burst Write Cycle
Suspend Burst Write Cycle
WRITE TRUTH TABLE
GW
BW
WEa
WEb
WEc
WEd
Operation
HHXXXX
READ
H L HHHH
READ
HL LHHH
WRITE BYTE a
H L H L HH
WRITE BYTE b
HLHHL L
WRITE BYTE c and d
HL L L L L
WRITE ALL BYTEs
LXXXXX
WRITE ALL BYTEs
Notes : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
www.DataSheet.in
- 5 - December 1998
Rev 2.0
5 Page 
KM736V787
128Kx36 Synchronous SRAM
www.DataSheet.in
- 11 -
December 1998
Rev 2.0
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet KM736V787.PDF ] | |
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