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PDF KTC812U Data sheet ( Hoja de datos )
| Número de pieza | KTC812U | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE/ SWITCHING) | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌA super-minimold package houses 2 transistor.
ᴌExcellent temperature response between these 2 transistor.
ᴌHigh pairing property in hFE.
ᴌThe follwing characteristics are common for Q1, Q2.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC *
Tj
Storage Temperature Range
* Total Rating
Tstg
RATING
60
50
5
150
30
200
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
ᴱ
ᴱ
KTC812U
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 2.00+_ 0.20
2 5 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. Q1 EMITTER
2. Q1 BASE
3. Q2 BASE
4. Q2 COLLECTOR
5. Q2 EMITTER
6. Q1 COLLECTOR
US6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1 Q2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=60V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
DC Current Gain
hFE (Note) VCE=6V, IC=2Ὠ
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100Ὠ, IB=10Ὠ
Transition Frequency
fT VCE=10V, IC=1Ὠ
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1ὲ
Noise Figure
NF VCE=6V, IC=0.1Ὠ, f=1ά, Rg=10ὶ
Note : hFE Classification Y(4):120ᴕ240, GR(6):200ᴕ400
Marking
6
12 3
MIN.
-
-
120
-
80
-
-
TYP.
-
-
-
0.1
-
2
1.0
MAX.
0.1
0.1
400
0.3
-
3.5
10
Type Name
54
UNIT.
ὧ
ὧ
V
ὲ
ὸ
W hFE Rank
2002. 1. 7
Revision No : 0
123
1/3
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTC812U.PDF ] | |
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