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PDF KTC802E Data sheet ( Hoja de datos )
| Número de pieza | KTC802E | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE/ SWITCHING) | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌHigh Current.
ᴌLow VCE(sat) .
: VCE(sat)ᴪ250mV at IC=200mA/IB=10mA.
ᴌComplementary to KTA702E.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : Single pulse Pw=1mS.
* Total Rating.
VCBO
VCEO
VEBO
IC
ICP (Note)
PC *
Tj
Tstg
RATING
15
12
6
500
1
200
150
-55ᴕ150
UNIT
V
V
V
mA
A
mW
ᴱ
ᴱ
KTC802E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
2
5
A1 1.0 +_ 0.05
B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
P
J 0.12+_ 0.05
P P5
1. Q1 EMITTER
2. Q1 BASE
3. Q2 COLLECTOR
4. Q2 EMITTER
5. Q2 BASE
6. Q1 COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1 Q2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
fT
Cob
1
TEST CONDITION
VCB=15V, IE=0
IC=10ỌA
IC=1mA
IE=10ỌA
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, fT=100MHz
VCB=10V, IE=0, f=1MHz
MIN.
-
15
12
6
270
-
-
-
Marking
23
TYP.
-
-
-
-
-
90
320
7.5
MAX.
100
-
-
-
680
250
-
-
6 54
UNIT
nA
V
V
V
-
mV
MHz
pF
L ZType Name
123
2002. 2. 20
Revision No : 1
1/3
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTC802E.PDF ] | |
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