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PDF WFF10N65 Data sheet ( Hoja de datos )

Número de pieza WFF10N65
Descripción Silicon N-Channel MOSFET
Fabricantes WINSEMI SEMICONDUCTOR 
Logotipo WINSEMI SEMICONDUCTOR Logotipo



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No Preview Available ! WFF10N65 Hoja de datos, Descripción, Manual

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Features
10A,650V,RDS(on)(Max 1Ω)@VGS=10V
Ultra-low Gate Charge(Typical 43nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage(VISO=4000V AC)
Improved dv/dt capability
WFF10N65
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for AC-DC switching
power supplies,DC-DC power converters,high voltage h-bridge motor
drive PWM.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
10*
6.0*
40*
±30
748
15.6
4.5
50
0.4
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Value
Units
Min Typ Max
- - 2.5 /W
- - 62.5 /W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.

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WFF10N65 pdf
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WFF10N65
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
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