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PDF WFF5N60 Data sheet ( Hoja de datos )

Número de pieza WFF5N60
Descripción Silicon N-Channel MOSFET
Fabricantes WINSEMI SEMICONDUCTOR 
Logotipo WINSEMI SEMICONDUCTOR Logotipo



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No Preview Available ! WFF5N60 Hoja de datos, Descripción, Manual

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Features
4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V
Ultra-low Gate Charge(Typical 16nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150)
WFF5N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced Planar
stripe, VDMOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for half bridge and full
bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
600
4.5*
3.1*
16*
±30
240
10
4.5
33
0.26
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
3.79
62.5
Units
/W
/W
. Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved
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WFF5N60 pdf
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WFF5N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
. Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved
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