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PDF WFF9N50 Data sheet ( Hoja de datos )

Número de pieza WFF9N50
Descripción Silicon N-Channel MOSFET
Fabricantes WINSEMI SEMICONDUCTOR 
Logotipo WINSEMI SEMICONDUCTOR Logotipo



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No Preview Available ! WFF9N50 Hoja de datos, Descripción, Manual

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Features
9A,500V, RDS(on)(Max0.85Ω)@VGS=10V
Ultra-low Gate charge(Typical 30nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFF9N50
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
9
5.1
32
±30
510
13
3.5
44
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Value
Units
Min Typ Max
- - 2.86 /W
- 0.5 - /W
- - 62.5 /W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.

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WFF9N50 pdf
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WFF9N50
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
Steady, all for your advance
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