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Número de pieza | WFF9N50 | |
Descripción | Silicon N-Channel MOSFET | |
Fabricantes | WINSEMI SEMICONDUCTOR | |
Logotipo | ||
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Features
� 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V
� Ultra-low Gate charge(Typical 30nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFF9N50
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
9
5.1
32
±30
510
13
3.5
44
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Value
Units
Min Typ Max
- - 2.86 ℃/W
- 0.5 - ℃/W
- - 62.5 ℃/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
1 page www.DataSheet.in
WFF9N50
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
Steady, all for your advance
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet WFF9N50.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFF9N50 | Silicon N-Channel MOSFET | WINSEMI SEMICONDUCTOR |
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