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PDF WFP18N20 Data sheet ( Hoja de datos )
| Número de pieza | WFP18N20 | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | WINSEMI SEMICONDUCTOR | |
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Features
� 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 40nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFP18N20
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters,and DC motor control.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
200
18
12
72
±30
580
13
5
140
0.78
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RACS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance, Case- to -Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 0.89 ℃/W
- 0.5 - ℃/W
- - 62.5 ℃/W
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
1 page  
www.DataSheet.in
WFP18N20
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
Steady, all for your advance
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WFP18N20.PDF ] | |
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