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PDF FLC167WF Data sheet ( Hoja de datos )
| Número de pieza | FLC167WF | |
| Descripción | C-Band Power GaAs FET | |
| Fabricantes | Fujitsu Component | |
| Logotipo |  |
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FLC167WF
C-Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 31.8dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE: ηadd = 35%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC167WF is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with
gate resistance of 200Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
7.5
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 400mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS = 30mA
IGS = -30µA
-1.0
-5
Limit
Typ. Max.
600 900
300 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6 GHz
30.5 31.8 -
6.5 7.5 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 35 -
%
Thermal Resistance
CASE STYLE: WF
Rth Channel to Case
- 15 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
www.DataSheet.in
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLC167WF.PDF ] | |
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