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PDF EN25S40 Data sheet ( Hoja de datos )

Número de pieza EN25S40
Descripción 4 Megabit 1.8V Serial Flash Memory
Fabricantes Eon Silicon Solution 
Logotipo Eon Silicon Solution Logotipo



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No Preview Available ! EN25S40 Hoja de datos, Descripción, Manual

EN25S40
EN25S40
4 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 1.65-1.95 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
4 M-bit Serial Flash
- 4 M-bit/512 K-byte/2048 pages
- 256 bytes per programmable page
Standard or Dual SPI
- Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD#
High performance
- 75MHz clock rate for one data bit
- 50MHz clock rate for two data bits
Low power consumption
- 7 mA typical active current
- 1 μA typical power down current
Uniform Sector Architecture:
- 128 sector of 4-Kbyte
- 8 blocks of 64-Kbyte
- Any sector or block can be erased individually
Software and Hardware Write Protection:
- Block Protect Bits are default set to “1” at
Power-up
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 400ms typical
- Chip erase time: 3.5 seconds typical
Lockable 256 byte OTP security sector
Minimum 100K endurance cycle
Package Options
- 8 pins SOP 150mil body width
- 8 contact VDFN 2x3mm
- 8 contact VDFN 5x6 mm
- All Pb-free packages are RoHS compliant
Industrial temperature Range
GENERAL DESCRIPTION
The EN25S40 is a 4 Megabit (512K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25S40 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Dual I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI),
DQ1(DO), WP# and HOLD#. SPI clock frequencies of up to 50MHz are supported allowing equivalent
clock rates of 100MHz for Dual Output when using the Dual Output Fast Read instructions. The
memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25S40 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25S40 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/04/28
www.eonssi.com
www.DataSheet.in

1 page




EN25S40 pdf
EN25S40
MEMORY ORGANIZATION
The memory is organized as:
z 524,288 bytes
z Uniform Sector Architecture
8 blocks of 64-Kbyte
128 sector of 4-Kbyte
z 2048 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture
Block
7
6
5
4
3
2
1
0
Sector
127
112
111
96
95
80
79
64
63
48
47
32
31
16
15
4
3
2
1
0
07F000h
Address range
07FFFFh
070000h
06F000h
070FFFh
06FFFFh
060000h
05F000h
060FFFh
05FFFFh
050000h
04F000h
050FFFh
04FFFFh
040000h
03F000h
040FFFh
03FFFFh
030000h
02F000h
030FFFh
02FFFFh
020000h
01F000h
020FFFh
01FFFFh
010000h
00F000h
004000h
003000h
002000h
001000h
000000h
010FFFh
00FFFFh
004FFFh
003FFFh
002FFFh
001FFFh
000FFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/04/28
www.eonssi.com
www.DataSheet.in

5 Page





EN25S40 arduino
Table 4B. Instruction Set (Read Instruction)
EN25S40
Instruction Name
Read Data
Fast Read
Byte 1
Code
03h
0Bh
Byte 2
A23-A16
A23-A16
Byte 3
A15-A8
A15-A8
Dual Output Fast
Read
3Bh
Dual I/O Fast Read BBh
A23-A16 A15-A8
A7-A0,
A23-A8(2) dummy (2)
Byte 4
A7-A0
A7-A0
A7-A0
Byte 5
(D7-D0)
dummy
dummy
(D7-D0, …) (1)
Byte 6
n-Bytes
(Next byte)
(D7-D0)
(D7-D0, …) (1)
continuous
(Next Byte)
continuous
(one byte
per 4 clocks,
continuous)
(one byte
per 4 clocks,
continuous)
Notes:
1. Dual Output data
DQ0 = (D6, D4, D2, D0)
DQ1 = (D7, D5, D3, D1)
2. Dual Input Address
DQ0 = A22, A20, A18, A16, A14, A12, A10, A8 ; A6, A4, A2, A0, dummy 6, dummy 4, dummy 2, dummy 0
DQ1 = A23, A21, A19, A17, A15, A13, A11, A9 ; A7, A5, A3, A1, dummy 7, dummy 5, dummy 3, dummy 1
Table 5. Manufacturer and Device Identification
OP Code
ABh
90h
9Fh
(M7-M0)
1Ch
1Ch
(ID15-ID0)
3813h
(ID7-ID0)
72h
72h
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/04/28
www.eonssi.com
www.DataSheet.in

11 Page







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