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PDF IRHQ9110 Data sheet ( Hoja de datos )
| Número de pieza | IRHQ9110 | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRHQ9110 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 93794C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ9110 100K Rads (Si)
IRHQ93110 300K Rads (Si)
RDS(on)
1.1Ω
1.1Ω
ID
-2.3A
-2.3A
IRHQ9110
100V, QUAD P-CHANNEL
RAD-Hard™ HEXFET®
MOSFET TECHNOLOGY
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The com-
bination of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings ( Per Die)
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes, refer to the last page
www.irf.com
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
-2.3
-1.5 A
-9.2
12 W
0.1 W/°C
±20 V
75 mJ
-2.3 A
1.2 mJ
9.0
-55 to 150
V/ns
oC
300 (for 5s)
0.89 (Typical)
g
1
03/24/04
www.DataSheet.in
1 page  
Pre-Irradiation
IRHQ9110
500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
400 Coss = Cds + Cgd
300 Ciss
200
100
0
1
Coss
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -2.3A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 4 8 12 16
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150° C
1
TJ = 25°C
0.1
0.5
VGS = 0 V
1.0 1.5 2.0 2.5 3.0
-VSD ,Source-to-Drain Voltage (V)
3.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1 10 100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHQ9110.PDF ] | |
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