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PDF IRHLQ77214 Data sheet ( Hoja de datos )
| Número de pieza | IRHLQ77214 | |
| Descripción | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97260
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHLQ77214 100K Rads (Si)
IRHLQ73214 300K Rads (Si)
RDS(on)
1.0Ω
1.0Ω
ID
2.6A
2.6A
2N7615U6
IRHLQ77214
250V, Quad N-CHANNEL
TECHNOLOGY
LCC-28
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
2.6
1.6
10.4
12
0.1
±10
38.5
2.6
1.2
5.56
-55 to 150
300 (for 5s)
0.89 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
03/13/08
www.DataSheet.in
1 page  
Pre-Irradiation
IRHLQ77214, 2N7615U6
5
4.5 ID = 2.6A
4
3.5
3
2.5
TJ = 150°C
2
1.5
1
0.5 TJ = 25°C
0
2 4 6 8 10 12
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
3
2.5
TJ = 150°C
2
1.5
TJ = 25°C
1
Vgs = 4.5V
0.5
01234567
ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
320
ID = 1.0mA
300
280
260
240
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
2.5
2.0
1.5
1.0 ID = 50µA
ID = 250µA
0.5 ID = 1.0mA
ID = 150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
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